Renesas has prototyped its split gate MONOS (SG-MONOS) charge trap flash technology which uses 3D fin-shaped transistors and is intending to use the technology to put 100MB memories onto MCUs made on a 16/14nm process. In 2016, Renesas announced the successful development of fin-type SG-MONOS flash memory cell by applying and adopting charge trap type flash memory ...
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from Electronics Weekly https://www.electronicsweekly.com/news/business/renesas-sg-monos-puts-100mb-memories-mcus-2017-12/
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