Fujitsu has developed a technology for bonding single-crystal diamond to a SiC substrate at room temperature. Using this technology for heat dissipation in a high-power GaN high HEMT enables stable operations at high power levels. Application of this technology is expected to significantly enhance the performance of weather radars and wireless communications. Boosting range and ...
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from Electronics Weekly https://www.electronicsweekly.com/news/business/fujitsu-bonds-diamond-sic-room-temperature-2017-12/
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