Samsung says it has begun mass producing 2nd-generation 10nm nanometer 8Gb DDR4 DRAM. The 2nd-generation delivers a 30% ‘productivity gain’ over the company’s 1st-generation 10nm-class 8Gb DDR4, says Samsung. Performance and power have been improved about 10% and 15%. respectively. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200 Mbps of the ...
This story continues at Samsung starts 2nd gen 10nm DRAM production
Or just read more coverage at Electronics Weekly
from Electronics Weekly https://www.electronicsweekly.com/news/business/samsung-starts-2nd-gen-10nm-dram-production-2017-12/
No comments:
Post a Comment