Thursday, 12 January 2017

Beta Gallium Oxide delivers ultra-wide band-gap GOOI

Beta Gallium Oxide has potential as a wide band-gap semiconductor, say Purdue University deivering ultra-efficient switches for power electronics applications such as the power grid, military ships and aircraft. The schematic at left shows the design for an experimental transistor made of a semiconductor called beta gallium oxide, which could bring new ultra-efficient switches for ...

Read full article: Beta Gallium Oxide delivers ultra-wide band-gap GOOI



from Electronics Weekly http://www.electronicsweekly.com/news/business/492243-2017-01/

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