Silicon doping in GaN-based vertical-cavity surface-emitting lasers (VCSELs) could reduce complexity and improve blue laser efficiency, claims a team formed between Meijo University Nagoya University. “GaN-based vertical-cavity surface-emitting lasers are expected to be adopted in various applications, such as retinal scanning displays, adaptive headlights, and high-speed visible-light communication systems,” said researcher Tetsuya Takeuchi of Meijo ...
Read full article: Silicon doping comes to the rescue of vertical cavity GaN lasers
from Electronics Weekly http://www.electronicsweekly.com/news/research-news/silicon-doping-comes-rescue-vertical-cavity-gan-lasers-2016-11/
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