French research labs Leti and Inac have demonstrated a quantum-dot-based spin qubit using a CMOS process on a 300mm FDSoI wafer. The device, developed with the University of Grenoble Alpes, consists of a two-gate, p-type transistor with an un-doped channel. See University of Sussex quantum gate “Our one-qubit demonstrator brings CMOS technology closer to the emerging ...
Read full article: Leti demonstrates qubit on CMOS wafer
from Electronics Weekly http://www.electronicsweekly.com/news/research-news/leti-demonstrates-qubit-cmos-wafer-2016-11/
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