IBM, Samsung and GlobalFoundries have made 5nm ICs using gate-all-around (GAA) transistors and EUV lithography. The transistor technology, dubbed GAAFET, is a finfet with a horizontal fin which becomes a silicon nanowire (or nanosheet) stretched between the source and drain. The IBM/Samsung/ GloFo GAAFET has three nanosheets stacked on top of each other running between ...
Read full article: IBM, Samsung, Globalfoundries develop 5nm GAAFET IC.
from Electronics Weekly https://www.electronicsweekly.com/news/business/ibm-samsung-globalfoundries-develop-5nm-gaafet-ic-2017-06/
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