Toshiba has developed four level cell NAND flash prototype ICs which it calls QLC. ‘Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell,’ says Toshiba, ‘achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires ...
Read full article: Tosiba develops quad level cell NAND
from Electronics Weekly https://www.electronicsweekly.com/news/business/tosiba-develops-quad-level-cell-nand-2017-06/
No comments:
Post a Comment