TI has introduced a 60-V N-channel power FemtoFET power transistor in a 1.53-mm-by-0.77-mm silicon-based package with a typical on-resistance (Rdson) of 54-m designed to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The CSD18541F5 expands TI’s NexFET technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints. CSD18541F5 key features and benefits ...
TI adds to NexFET FemtoFET MOSfets
from ElectronicsWeekly http://www.electronicsweekly.com/news/business/ti-adds-to-nexfet-femtofet-mosfets-2016-06/
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