Toshiba has revealed details of an electrostatic discharge protection scheme for 0.13μm analogue power semiconductors. “ESD protection is much more robust, up four times, and the standard deviation is only 1/12 that of the conventional structure,” claimed the firm. 3D simulation revealed that lattice temperature increase due to the current flowing at the highest electric field ...
Input structure boosts analogue ESD protection
from ElectronicsWeekly http://www.electronicsweekly.com/market-sectors/power/input-structure-boosts-analogue-esd-protection-2016-06/
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