Toshiba has announced its next generation of super-junction deep trench semiconductor technology for power mosfets. Based on the DTMOS V process, devices are claimed to operate with lower EMI noise and with reduced on-resistance compared to previous DTMOS IV mosfets. As with DTMOS IV, V is is based on a single epitaxial process involving deep ...
PCIM: Toshiba super-junction mosfets cut resistance and noise
from ElectronicsWeekly http://www.electronicsweekly.com/news/products/power-supplies/pcim-toshiba-super-junction-mosfets-cut-resistance-and-noise-2016-05/
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