Rensselaer Polytechnic Institute and the University of New Mexico have got together to develop a way of growing cubic GaN on silicon substrates. Compared with the hexagonal GaN used in all commercial leds, cubic GaN has a lower bandgap and therefore emits longer weavelengths for a given level of indium doping – potentially stretching efficient ...
Read full article: Cubic GaN on silicon substrates, and the green gap
from Electronics Weekly https://www.electronicsweekly.com/blogs/led-luminaries/cubic-gan-silicon-substrates-green-gap-2017-04/
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