Japanese gallium oxide power device start-up Flosfia has raised Y750m (£5m) in series B funding. http://flosfia.com The firm, a spin-out from the Kyoto University, is aiming to commercialise crystalline α-Ga2O3 (corundum/sapphire/ruby structure) in power transistors and Schottky diodes – with the intention of manufacturing 600V TO-220 diodes in 2018 to compete against silicon carbide power ...
Read full article: Gallium oxide power device firm gets £5m in second-round funding
from Electronics Weekly http://www.electronicsweekly.com/news/design/gallium-oxide-power-device-firm-gets-5m-second-round-funding-2017-03/
No comments:
Post a Comment