Imec has developed junction-less gate-all-around (GAA) nanowire (NW) FETs built in lateral and vertical configurations. With their simplified processing, improved reliability, reduced low frequency noise and lower IOFF values, they are an attractive option for advanced logic, low power circuits and analog/RF applications. Moreover, they enable a simpler path for considerable SRAM scaling via the ...
Imec develops junction-less, gate-all-round, nanowire FETs
from ElectronicsWeekly http://www.electronicsweekly.com/news/business/imec-develops-junction-less-gate-all-round-nanowire-fets-2016-06/
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