TT Electronics has launched an SiC power mosfet for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be used in applications, including distribution control systems with greater environmental challenges, such as those in close ...
TT Electronics launches SiC power mosfet
from ElectronicsWeekly http://www.electronicsweekly.com/news/business/tt-electronics-launches-sic-power-mosfet-2016-06/
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