Monday, 1 October 2018

Hynix to ramp new $13.5bn NAND fab

On Thursday, Hynix is to hold a ceremony to celebrate the completion of its new flash fab and the running of first silicon. The fab, designated M15 semiconductor is in Cheongju, North Chungcheong Province. It cost $13.5 billion. First silicon will be  72-layer 3D NAND. Next year it will introduce 96-layer NAND to the production ...

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from Electronics Weekly https://www.electronicsweekly.com/uncategorised/hynix-ramp-new-13-5bn-nand-fab-2018-10/

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