600V GaN fets have built-in drivers for easy use from 100W to 10kW

Texas Instruments has announced ready-to-use 600V gallium nitride (GaN) power transistors with built-in driver stages. The 50 and 70mΩ devices are intended for applications from 100W up to 10kW. While GaN transistor have the potential to increase the efficiency and shrink the size of power supplies, their high speed and somewhat fussy characterisitcs mean that ...

This story continues at 600V GaN fets have built-in drivers for easy use from 100W to 10kW

Or just read more coverage at Electronics Weekly

from Electronics Weekly https://www.electronicsweekly.com/news/products/power-supplies/600v-gan-fets-built-drivers-easy-use-100w-10kw-2018-10/