NXP adds to LDMOS RF power transistors

NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon technology. With more power density, a lower current level and wider safety margins than previous RF power solutions, 65 V LDMOS enables more integrated and reliable Industry 4.0 systems. The MRFX series of 65 ...

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from Electronics Weekly https://www.electronicsweekly.com/news/products/power-supplies/nxp-adds-ldmos-rf-power-transistors-2018-09/