Thursday, 24 May 2018

40mOhm silicon carbide transistor switches 1,200V and 50A

New Jersey-based UnitedSiC has introduced a silicon carbide transistor that can switch 1.2kV and 47A at 100degC. Unusually for SIC transistors, the gate is fully compatible with existing IGBT drivers, and has a 5V gate threshold – avoiding accidental turn-on issues associated with the lower thresholds of SiC mosfets. Called UJ3C120040K3S, its gate characteristics come ...

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from Electronics Weekly https://www.electronicsweekly.com/market-sectors/automotive-electronics/40mohm-silicon-carbide-transistor-switches-1200v-50a-2018-05/

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