Russian scientists have measured magnetoresistance oscillations and the quantum Hall effect in InAs heterostructures, and are predicting potential 200GHz operation from the material. The material tested was n-In0.85Ga0.18As/In0.82Al0.82As, specifically grown for its high indium content to increase carrier speed. “Generally speaking, structures with quantum wells and high InAs content have already demonstrated excellent results in microwave ...
This story continues at InAs chips could reach 200GHz
Or just read more coverage at Electronics Weekly
from Electronics Weekly https://www.electronicsweekly.com/news/research-news/inas-chips-reach-200ghz-2018-03/
No comments:
Post a Comment