ISSCC: Novel gate drive improves GaN power transistor switching

GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention. As a German team pointed out at ISSCC, GaN transistors have a threshold voltage of ~1V, which makes them vulnerable to spurious turn‑on through the Miller capacitance, particularly when ...

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from Electronics Weekly https://www.electronicsweekly.com/news/research-news/isscc-novel-gate-drive-improves-gan-power-transistor-switching-2018-02/