Third China DRAM contender gears up

China’s two big DRAM potential contenders – Yangtze River Storage and Fujian Jinhua IC – are getting a local competitor. Digitimes reports that GigaDevice Semiconductor and Hefei RuiLi IC Manufacturing are to combine to spend $2.7 billion on developing a 19nm DRAM process. Hefei is to put up 80% of the $2.7 billion and GigaDevice ...

This story continues at Third China DRAM contender gears up

Or just read more coverage at Electronics Weekly

from Electronics Weekly https://www.electronicsweekly.com/blogs/mannerisms/memory-mannerisms/third-china-dram-contender-gears-2017-11/