LEDs and power transistors could benefit from research by Finnish scientist working as part of an international team. They have taken a second look at beryllium as a p-dopant for GaN. “Experiments with beryllium doping were conducted in the late 1990s in the hope that beryllium would prove more efficient as a doping agent than ...
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from Electronics Weekly https://www.electronicsweekly.com/news/research-news/gan-reveals-another-secret-2017-11/
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