Leti has developed a new light-sensing device that integrates photodiodes below the buried oxide (BOX) of FDSOI transistors, making the transistors very sensitive to visible light. Photodiodes were co-integrated in the SOI substrate, replacing conventional FDSOI transistor backgate. This device architecture may lead not only to very small pixels with maximized fill factor, but also ...
Read full article: Leti integrates photodiodes below BOX of FD-SOI transistors
from Electronics Weekly http://www.electronicsweekly.com/news/business/leti-integrates-photodiodes-box-fd-soi-transistors-2016-12/
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