Mitsubishi Electric has announced an addition to its GaN RF power transistor range. Intended for use in symmetric Doherty amplifiers in macro-cell basestations from 2.5 to 2.7GHz, MGFS53G27ET1 can deliver 220W (53.4dBm) saturated, operating from 50V. Linear gain is 18dB and drain efficiency is 74%. At the same time, at European Microwave Week in London, ...
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from Electronics Weekly http://www.electronicsweekly.com/news/products/rf-microwave-optoelectronics/mitsubishi-extends-gan-rf-power-2016-10/
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