1nm gate-length MoS2 transistors could spell the end of silicon

Silicon’s elasticity has been under threat for some time and a joint paper in Science from UC Berkeley, Stanford, the Lawrence Berkeley National University and the University of Texas could spell the end of the silicon story. The researchers describe a molybdenum disulphide (MoS2) transistor with a 1nm gate length. “High-performance silicon transistors can have ...

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from Electronics Weekly http://www.electronicsweekly.com/news/business/1nm-gate-length-mos2-transistors-spell-end-silicon-2016-10/