Wednesday, 27 April 2016

Ampleon claims RF transistor lifts efficiency to next level

Ampleon, the Netherlands-based power semiconductor firm, has introduced an RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications. The company claims the RF device which is fabricated in a high voltage LDMOS process has greater than 50% power efficiency and the average DVB-T power output is 150W from a single transistor for ...

Ampleon claims RF transistor lifts efficiency to next level



from ElectronicsWeekly http://www.electronicsweekly.com/news/ampleon-claims-rf-transistor-lifts-efficiency-to-next-level-2016-04/

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