Toshiba has released a dual n-channel mosfet with high ESD protection, intended for automotive applications including driving headlight LEDs. Made on the firm’s U-MOSⅧ-H process and AEC-Q101 qualified, it is called SSM6N813R. Each transistor in the package has a maximum current of 3.5A (subject to junction temperature) and maximum drain-source voltage of 100V – a ...
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from Electronics Weekly https://www.electronicsweekly.com/news/products/power-supplies/551844-2019-02/
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