Wednesday 22 February 2017

Toshiba sampling 64-layer 512Gbit 3D NAND

Toshiba is sampling 64-layer 3-bit-per cell 512Gbit 3D NAND. Mass production is scheduled for H2. In April Toshiba plans to sample a  1Tbyte product which stacks 16 512Gbit die in a package. For the 512Gbit device, Toshiba deployed a 64-layer stacking process to realize a 65% larger capacity per unit chip size than the 48-layer 256Gbit ...

Read full article: Toshiba sampling 64-layer 512Gbit 3D NAND



from Electronics Weekly http://www.electronicsweekly.com/news/business/toshiba-sampling-64-layer-512gbit-3d-nand-2017-02/

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