Imec has achieved the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices. Also, the impact of the new architecture on intrinsic ESD performance was studied, and an ESD protection diode is proposed. These ...
Read full article: Imec makes CMOS GAA nanowire MosFETs.
from Electronics Weekly http://www.electronicsweekly.com/news/business/imec-makes-cmos-gaa-nanowire-mosfets-2016-12/
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