Imec has developed a 8nm p-MTJ device with 100% tunnel magnetoresistance (TMR) and coercive field as high 1500Oe. This enables the establishment of a manufacturing process for high-density spin-transfer-torque magnetic random access memory (STT-MRAM) arrays that meet the requirements of the 10nm and beyond logic node for embedded non-volatile memory applications. It also paves the ...
Read full article: Imec develops 8nm MRAM
from Electronics Weekly http://www.electronicsweekly.com/news/business/490715-2016-12/
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