Wednesday 27 July 2016

Tosiba sampling 64-layer 3D NAND

Today, Toshiba starts samoling a 64-layer 3D NAND memory. The Chip has 3-bit-per-cell technology and has a 256Gbit (32GB) capacity. next on the development roadmap is a 512Gbit (64GB) device, also with 64 layers. The new device succeeds the 48-layer BiCS FLASH, and delivers a 40% larger capacity per unit chip size than 48-layer stacking ...

Tosiba sampling 64-layer 3D NAND



from ElectronicsWeekly http://www.electronicsweekly.com/news/business/tosiba-sampling-64-layer-3d-nand-2016-07/

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