IQE and imec have demonstrated 650V GaN-on-Si power diodes on 200 mm wafers GaN technology offers faster switching-power devices with higher breakdown voltage and lower on-resistance than silicon, making it an ideal material for advanced power electronic components. The partnership builds on promising results achieved in a recent project, in which imec and IQE collaborated ...
IQE ties up with Imec for GaN-on-Si
from ElectronicsWeekly http://www.electronicsweekly.com/news/business/iqe-ties-up-with-imec-for-gan-on-si-2016-05/
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