Microsemi joins US SiC and GaN initiative for 1.7 and 3.3kV devices

Microsemi has joined PowerAmerica, the US public-private initiative to promote the commercialisation of GaN and SiC power semiconductors, and US-based manufacturing. The organisation has $70m backing from the US Department of Energy over five years. The firm’s role at the organisation will be supporting the commercialisation of 1.7 and 3.3kV SiC mosfets and SiC Schottky diodes. “With ...

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from Electronics Weekly https://www.electronicsweekly.com/news/business/microsemi-joins-us-sic-gan-initiative-1-7-3-3kv-devices-2017-08/