Renesas claims lowest power SRAM

Renesas claims the lowest standby power for embedded SRAM of 13.7 nW/Mbit with a 1.84 ns read speed with Implementing silicon on thin BOX (SOTB) 65nm circuit technology. The technology switches dynamically with low power overhead between active operation in which the CPU core performs read and write operations of the embedded SRAM, and the ...

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from Electronics Weekly https://www.electronicsweekly.com/news/business/renesas-claims-lowest-power-sram-2017-07/