Hefei Rui-Li IC, formerly called Hefei Chang Xin, the China DRAM start-up, intends to instal front end equipment at the end of this year and begin production of 19nm DRAM at the end of February 2018, reports Digitimes. Rui-Li is said to have started negotiating with wafer companies to ensure supplies. China’s 3D NAND start-up ...
This story continues at China’s Timely Memory Debut
Or just read more coverage at Electronics Weekly
from Electronics Weekly https://www.electronicsweekly.com/blogs/mannerisms/memory-mannerisms/chinas-timely-memory-debut-2017-07/
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