Thursday, 11 May 2017

Osram aims for high-power deep-UV AlGaN leds

Osram is heading a consortium to develop AlGaN chips on AlN substrates. Fraunhofer IISB is in charge of growing AlN crystals of sufficient size and quality for wafer production. For more on this, see the main Electronics Weekly website.

Read full article: Osram aims for high-power deep-UV AlGaN leds



from Electronics Weekly https://www.electronicsweekly.com/blogs/led-luminaries/osram-aims-high-power-deep-uv-algan-leds-2017-05/

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