The Fraunhofer Institute for Applied Solid State Physics (IAF) has developed the first integrated 600V GaN half-bridge circuit. “A switching frequency of up to 3MHz allows us to achieve a much greater power density,” said Fraunhofer research associate Richard Reiner. On the die is two 600V 120mΩ GaN HETS (high electron mobility transistors) and two ...
Read full article: Integrated GaN half bridge switches 600V at 3MHz
from Electronics Weekly https://www.electronicsweekly.com/news/design/integrated-gan-half-bridge-switches-600v-3mhz-2017-05/
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