Fraunhofer IAF has developed an integrated monolithic multi-level converter in high-volt AlGaN/GaN-on-Si technology. The integrated inverter circuit is designed for +/-400V and 5A operation. Made from comprises four transistors and six diodes, it fits into 2x3mm and has been demonstrated converting ac US mains to dc. “The circuit exhibits minimal dynamic losses at very high ...
Read full article: 2kW AlGaN-on-silicon converter is tiny
from Electronics Weekly https://www.electronicsweekly.com/news/design/2kw-algan-silicon-converter-tiny-2017-05/
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