Researchers at the University of Tokyo have used metal germanides at the metal-germanium interface, with suitable surface crystal planes, to improve contact resistance and device performance in germanium transistors. Germanium has high electron and hole mobilities, and has been demonstrated in MISFETs (metal-insulator FETs), but parasitic resistance and off-state leakage at source and drain gates ...
Read full article: Germanium transistors show promise again
from Electronics Weekly http://www.electronicsweekly.com/news/research-news/germanium-transistors-show-promise-2016-11/
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