Samsung has started the ramp of 90-layer 256Gb 3D TLC NAND with the ‘Toggle DDR 4.0’ interface which transfers data between storage and memory at 1.4Gbps which is a 40% increase from its 64-layer predecessor. The energy efficiency of Samsung’s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage ...
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from Electronics Weekly https://www.electronicsweekly.com/news/business/samsung-ramping-90-layer-256gb-tlc-nand-toggle-ddr-4-0-interface-toggle-ddr-4-0-interfac-2018-07/
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