Samsung says it has produced a Terabit 3D NAND flash memory which will be in production next year. Samsung’s intention is to stack 16 Tbit die to deliver a 2TB memory in a chip package. The Tbit chip has 96 layers and four-bit-per-cell (QLC) technology.
This story continues at Samsung develops Tb V-NAND
Or just read more coverage at Electronics Weekly
from Electronics Weekly https://www.electronicsweekly.com/news/business/samsung-develops-tb-v-nand-2017-08/
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